CVE-2021-42114
Scalable Rowhammering In the Frequency Domain to Bypass TRR Mitigations On Modern DDR4/LPDDR4X Devices
Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors (Samsung, SK Hynix, Micron) are affected by this vulnerability. For more details, please refer to our publication.
Attack profile
How easy it is to exploit
- Attack vector
- Network
- Complexity
- High
- Privileges needed
- None
- User interaction
- None
What an attacker can affect
- Confidentiality
- High
- Integrity
- High
- Availability
- High
Exploit likelihood
What each source reports
CVE List Score used
9.0
Scalable Rowhammering In the Frequency Domain to Bypass TRR Mitigations On Modern DDR4/LPDDR4X Devices
Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors (Samsung, SK Hynix, Micron) are affected by this vulnerability. For more details, please refer to our publication.
- Record
CVE-2021-42114- CVSS 3.1
- 9.0 Critical
CVSS:3.1/AV:N/AC:H/PR:N/UI:N/S:C/C:H/I:H/A:H - Weakness
- CWE-20
- Updated
- 2026-11-02
EUVDEUVD-2021-29099
9.0
Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors (Samsung, SK Hynix, Micron) are affected by this vulnerability. For more details, please refer to our publication.
- Record
EUVD-2021-29099- CVSS 3.1
- 9.0 Critical
CVSS:3.1/AV:N/AC:H/PR:N/UI:N/S:C/C:H/I:H/A:H - Updated
- 2026-11-03
GitHub AdvisoriesGHSA-6wv8-rx52-7p78 No score
Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target...
Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors (Samsung, SK Hynix, Micron) are affected by this vulnerability. For more details, please refer to our publication.
- Record
GHSA-6wv8-rx52-7p78- Updated
- 2026-11-02
NVD
9.0
Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors (Samsung, SK Hynix, Micron) are affected by this vulnerability. For more details, please refer to our publication.
- Record
CVE-2021-42114- CVSS 3.1
- 9.0 Critical
CVSS:3.1/AV:N/AC:H/PR:N/UI:N/S:C/C:H/I:H/A:H - CVSS 3.1
- 8.3 High
CVSS:3.1/AV:A/AC:H/PR:N/UI:N/S:C/C:H/I:H/A:H - CVSS 2.0
- 7.9 High
AV:A/AC:M/Au:N/C:C/I:C/A:C - Weakness
- CWE-20
- Updated
- 2026-11-02
Affected products
History
| Recorded | Changed | Sources |
|---|---|---|
| aliases, published | EUVD | |
| first indexed | CVE List, GitHub Advisories, NVD |
Dates are when Every CVE recorded each change. Upstream dates may differ.
In short
CVE-2021-42114 is a critical vulnerability (CVSS 9.0) in Micron Lpddr4, published November 16, 2021. No source lists public exploit code. EPSS puts the chance of exploitation in the next 30 days at 2.98%, the 87th percentile. No source names a fixed version.